MP4201

DescriptionThe MP4201 is a kind of power MOSFET module. It is silicon N channel MOS type. The device is intended for high power, high speed switching applications and hammer drive, pulse motor drive and inductive load switching. There are some features of MP4201as follows: (1)4 V gate drive availa...

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SeekIC No. : 004425761 Detail

MP4201: DescriptionThe MP4201 is a kind of power MOSFET module. It is silicon N channel MOS type. The device is intended for high power, high speed switching applications and hammer drive, pulse motor drive...

floor Price/Ceiling Price

Part Number:
MP4201
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Description

The MP4201 is a kind of power MOSFET module. It is silicon N channel MOS type. The device is intended for high power, high speed switching applications and hammer drive, pulse motor drive and inductive load switching. There are some features of MP4201 as follows: (1)4 V gate drive available; (2)small package by full molding (SIP 10 pin); (3)high drain power dissipation (4 devices operation): PT=4 W (Ta=25); (4)low drain-source ON resistance: RDS(ON)=0.33 (typ); (5)low leakage current: IGSS=±5A (max) (VGS=±16 V), IDSS=100A (max) (VDS=120 V); (6)enhancement-mode: Vth=0.8 to 2.0 V (ID=1 mA).

What comes next is about the maximum ratings of MP4201 (Ta=25): (1)drain-source voltage, VDSS: 120 V; (2)gate-source voltage, VGSS: ±20 V; (3)drain current, ID: 3 A ; (4)peak drain current, IDP: 6 A; (5)drain power dissipation (1 device operation), PD: 2.0 W; (6)drain power dissipation (4 devices operation), PDT: 4.0 W; (7)channel temperature, Tch: 150; (8)storage temperature range, Tstg: -55 to +150.

The following is about the electrical characteristics of MP4201(Ta=25): (1)gate leakage current, IGSS: ±5A max at VGS=±16 V, VDS=0; (2)drain cut-off current, IDSS: 100A max at VDS=120 V, VGS=0; (3)drain-source breakdown voltage, V(BR)DSS: 120 V min at ID=10 mA, VGS=0; (4)gate threshold voltage, Vth: 0.8 V min and 2.0 V max at VDS=10 V, ID=1 mA; (5)forward transfer admittance, |Yfs|: 1.5 S min and 3.2 S typ at VDS=10 V, ID=1.5 A; (6)drain-source ON resistance, RDS(ON): 0.42 typ and 0.74 max at ID=1.5 A, VGS=4 V; 0.33 typ and 0.45 max at ID=1.5 A, VGS=10 V ; (7)input capacitance, Ciss: 350 pF typ at VDS=10 V, VGS=0, f=1 MHz; (8)reverse transfer capacitance, Crss: 35 pF typ at VDS=10 V, VGS=0, f=1 MHz; (9)output capacitance, Coss: 155 pF typ at VDS=10 V, VGS=0, f=1 MHz.




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