MMFTN170

The MMFTN170 is a kind of N-channel enhancement mode field effect transistor. The characteristics at T a = 25°C of MMFTN170 can be summarized as (1)drain-source breakdown voltage at I D = 100 A V (BR)DSS: 60V; (2)zero gate voltage drain current at V DS = 25 V I DSS: 0.5 A; (3)gate-body leakage, forward at V GS = 15 V I GSSF: 10 nA; (4)gate-source threshold voltage at V DS = V GS , I D = 1 mA V GS(th): 0.8 to 3 V; (5)static drain-source on-resistance at V GS = 10 V, I D = 200 mA R DS(on): 5; (6)forward transconductance at V DS 2 V DS(on) , I D = 200 mA g FS: 320 mS; (7)input capacitance at V DS = 10 V, f = 1 MHz C iss: 40 pF; (8)output capacitance at V DS = 10 V, f = 1 MHz C oss: 30 pF; (9)reverse transfer capacitance at V DS = 10 V, f = 1 MHz C rss: 10 pF; (10)turn-on time at V DD = 25 V, I D = 500 mA, V GS = 10 V, R GEN = 50 t (on): 10 ns; (11)turn-off delay time at V DD = 25 V, I D = 500 mA, V GS = 10 V, R GEN = 50 t (off): 10 ns.

The features of MMFTN170 can be summarized as (1)voltage controlled small signal switch; (2)high saturation current capability.

The absolute maximum ratings of MMFTN170 are (1)drain-source voltage V DSS: 60 V; (2)drain-gate voltage (R GS 1 M) V DGR: 60 V; (3)gate-source voltage V GSS: ± 20 V; (4)drain current - continuous/ drain current - pulsed I D: 500/ 800 mA; (5)total power dissipation P tot: 300 mW; (6)operating and storage temperature range T j , T s: - 55 to + 150°C.