MMFT6N03HD

` Low RDS(on)  Provides Higher Efficiency and Extends Battery Life
` Logic Level Gate Drive -Can Be Driven by Logic ICs
` SOT-223 Saves Board Space and Heigh
` Diode Is Characterized for Use In Bridge Circuits
` IDSS Specified at Elevated Temperature
` Avalanche Energy Specified
` Mounting Information for SOT-223 Package Provide
` Use MMFT5N02HDT1 to order the 7 inch/1000 unit reel Use MMFT5N02HDT3 to order the 13 inch/4000 unit reel

` When mounted on 1" sq. Drain pad on FR-4 bd materi
` When mounted on minimum recommended Drain pad on FR-4 bd materia This document contains information on a new product. Specifications and information herein are subject to change without notice. HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

These MMFT6N03HD medium power SOT-223 devices are an advanced serie of power MOSFETs which utilize Motorola!fls High Cell Densit HDTMOS process. These surface mount MOSFETs feature low R_DS(on)  and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a very low rever recovery time. SOT-223 HDTMOS devices are designed for use i low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters and power management in peripheral products such as printers and cordless phones. MMFT6N03HD can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.