MMFT5P03HDT1

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25° C: 3.7A
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Gate Charge (Qg) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) @ Vds: 950pF @ 25V
Manufacturer: ON Semiconductor
Power - Max: 3.13W
Rds On (Max) @ Id, Vgs: 100 mOhm @ 5.2A, 10V


Description

The MMFT5P03HDT1 is one member of the MMFT5P03HD series.MMFT5P03HD is an advanced power MOSFET which utilizes Motorola's High Cell Density HDTMOS process. This miniature surface mount MOSFET features ultra low RDS(on) and true logic level performance. It is capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. MMFT5P03HD devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones.

Features of the MMFT5P03HDT1 are:(1)ultra low RDS(on) provides higher efficiency and extends battery life; (2)logic level gate drive-- can be driven by logic ICs; (3)miniature SOT223 surface mount package --saves board space; (4)diode is characterized for use in bridge circuits; (5)diode exhibits high speed, with soft recovery; (6)Idss specified at elevated temperature; (7)avalanche energy specified.They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.The avalanche energy is specified to eliminate theguesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

The absolute maximum ratings of the MMFT5P03HDT1 can be summarized as:(1)drainsource voltage:30V;(2)storage temperature:-55 to 150;(3)operating temperature:-55 to 150;(4)draingate voltage:30V;(5)gatesource voltage:±20V.At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current.The voltage is determined by Ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex.The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified.