MMFT5P03HD

Features: ` Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life` Logic Level Gate Drive-Can Be Driven by Logic IC` Miniature SOT-223 Surface Mount Package - Saves Boa Space` Diode Is Characterized for Use In Bridge Circuits` Diode Exhibits High Speed, With Soft Recovery` IDSSSpec...

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SeekIC No. : 004423817 Detail

MMFT5P03HD: Features: ` Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life` Logic Level Gate Drive-Can Be Driven by Logic IC` Miniature SOT-223 Surface Mount Package - Saves Boa Space` Diode ...

floor Price/Ceiling Price

Part Number:
MMFT5P03HD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

` Ultra Low RDS(on)  Provides Higher Efficiency and Extends Battery Life
` Logic Level Gate Drive-Can Be Driven by Logic IC
` Miniature SOT-223 Surface Mount Package - Saves Boa Space
` Diode Is Characterized for Use In Bridge Circuits
` Diode Exhibits High Speed, With Soft Recovery
` IDSS Specified at Elevated Temperature
` Avalanche Energy Specified




Specifications

Rating

Symbol

Max

Unit

Drain-to-Source Volta

VDSS

30

V

Drain-to-Gate Voltage (RGS= 1.0 M)

VDGR

30

V

Gate-to-Source Voltage - Continu

VGS

20

V

1 inch SQ.
FR-4 or G-10 PCB
10 seconds
Thermal Resistance - Junction to Ambien
Total Power Dissipation @ TA = 25
Linear Derating Factor
Drain Current - Continuous @ TA = 25
Continuous @ TA = 70(1)
Pulsed Drain Current

RTHJA
PD
ID
ID
IDM

40
3.13
25
5.2
4.1
26

/W
Watts
mW/
A
A
A

Minimum
FR-4 or G-10 PCB
10 seconds
Thermal Resistance - Junction to Ambien
Total Power Dissipation @ TA = 25
Linear Derating Factor
Drain Current - Continuous @ TA = 25
Continuous @ TA = 70(1)
Pulsed Drain Current

RTHJA
PD
ID
ID
IDM

80
1.56
12.5
3.7
2.9
19

/W
Watts
mW/
A
A
A

Operating and Storage Temperature Range

TJ , Tstg

-55 to 150

Single Pulse Drain-to-Source Avalanche Energy - Startin TJ= 25
(VDD = 30 Vdc, VGS = 10 Vdc, Peak IL = 12 Apk, L = 3.5 mH, RG = 25  )

EAS

250

mJ


` Repetitive rating; pulse width limited by maximum junction temperature.




Description

MMFT5P03HD is an advanced power MOSFET which utilizes Motorola!fls High Cell Density HDTMOS process. This miniatur surface mount MOSFET features ultra low RDS(on) and true logic level performance. It is capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source dio has a very low reverse recovery time. MMFT5P03HD devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. MMFT5P03HD can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.




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