Features: ` Silicon Gate for Fast Switching Speeds` Low Drive Requirement to Interface Power Loads to Logic Level ICs, VGS(th) = 2 Volts Max` Low RDS(on) -0.18 max` The SOT-C223 Package can be Soldered Using Wave or Re-flow. The Formed Leads Absorb Thermal Stress During Sol-dering, Eliminating the...
MMFT3055EL: Features: ` Silicon Gate for Fast Switching Speeds` Low Drive Requirement to Interface Power Loads to Logic Level ICs, VGS(th) = 2 Volts Max` Low RDS(on) -0.18 max` The SOT-C223 Package can be Solde...
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` Silicon Gate for Fast Switching Speeds
` Low Drive Requirement to Interface Power Loads to Logic
Level ICs, VGS(th) = 2 Volts Max
` Low RDS(on) -0.18 max
` The SOT-C223 Package can be Soldered Using Wave or Re-flow. The Formed Leads Absorb Thermal Stress During Sol-dering, Eliminating the Possibility of Damage to the Die
` Available in 12 mm Tape and Reel
Use MMFT3055ELT1 to order the 7 inch/1000 unit reel.
Use MMFT3055ELT3 to order the 13 inch/4000 unit reel.
Rating | Symbol | Value | Unit |
Drain-Cto-CSource Volta |
VDS |
60 |
Vdc |
Gate-Cto-CSource Voltage - Continu |
VGS |
±15 |
Vdc |
Drain Current - Continuou Drain Current - Pulse |
ID |
1.5 |
Adc |
Total Power Dissipation @ TA = 25 Derate above 25 |
PD(1) |
0.8 |
Watts |
Operating and Storage Temperature Range |
TJ , Tstg |
-65 to 150 |
|
Single Pulse Drain-Cto-CSource Avalanche Energy - Startin TJ= 25 (VDD = 25 V, VGS = 5 V, Peak IL = 1.5 A, L = 0.2 mH, RG = 25 ) |
EAS |
178 |
mJ |