MMFT2N25E

Features: · Avalanche Energy Capability Specified at Elevated Temperature· Internal Source-to-Drain Diode Designed to Replace Extern Zener Transient Suppressor - Absorbs High Energy in th Avalanche Mode· Source-to-Drain Diode Recovery Time ComparableDiscrete Fast Recovery DiodeSpecifications ...

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SeekIC No. : 004423812 Detail

MMFT2N25E: Features: · Avalanche Energy Capability Specified at Elevated Temperature· Internal Source-to-Drain Diode Designed to Replace Extern Zener Transient Suppressor - Absorbs High Energy in th Avalanche ...

floor Price/Ceiling Price

Part Number:
MMFT2N25E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/26

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Product Details

Description



Features:

· Avalanche Energy Capability Specified at Elevated Temperature
· Internal Source-to-Drain Diode Designed to Replace Extern Zener Transient Suppressor - Absorbs High Energy in th Avalanche Mode
· Source-to-Drain Diode Recovery Time Comparable Discrete Fast Recovery Diode




Specifications

Rating

Symbol

Value

Unit

Drain-to-Source Volta

VDSS

250

Vdc

Drain-to-Gate Voltage, ( RGS = 1.0 m )

VDGR

250

Vdc

Gate-to-Source Voltage - Continu

VGS

20

Vdc

Gate-to-Source Voltage - Single Pulse (tp 50 S)

VGSM

40

Vdc

Drain Current - Continuous @TC = 25C
Drain Current - Continuous @TC = 100C
Drain Current - Single Pulse (tp 10 S)

ID
ID
IDM

2.0
0.6
7.0

Adc
Apk

Total Power Dissipation @ TC = 25
Derate above 25
Total PD @ TA = 25 mounted on 1" Sq. Drain Pad on FR-4 Bd. Materia
Total PD @ TA = 25 mounted on 0.7" Sq. Drain Pad on FR-4 Bd. Materia
Total PD @ TA = 25 mounted on min. Drain Pad on FR-4 Bd. Materia

PD

0.77
6.2
1.0
1.2
0.8

Watts
mW/
Watts

Operating and Storage Temperature Range

TJ ,Tstg

-55 to 150




Description

This advanced high voltage MMFT2N25E TMOS E-FET is designed t withstand high energy in the avalanche mode and switch efficiently.

This new high energy MMFT2N25E also offers a drain-to-source dio with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.




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