MMFT2N02EL

` Silicon Gate for Fast Switching Speeds
` Low Drive Requirement to Interface Power Loads to Logic Level ICs, V_GS(th)  = 2 Volts Max
` Low R<sub>DS(on)</sub>  - 0.15 max
` The SOT-C223 Package can be Soldered Using Wave or Re-flow. The Formed Leads Absorb Thermal Stress During Sol-dering, Eliminating the Possibility of Damage to the Die
` Available in 12 mm Tape and Reel
    Use MMFT2N02ELT1 to order the 7 inch/1000 unit reel.
    Use MMFT2N02ELT3 to order the 13 inch/4000 unit reel.

This advanced MMFT2N02EL E-CFT is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commuta-tion modes. This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts. This new energy efficient device also offers a drain-Cto-Csource diode with a fast recove time. Designed for low voltage, high speed switching applications in power supplies, dc¤Cdc converter and PWM motor controls, these MMFT2N02ELs are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

The MMFT2N02EL is housed in the SOT-C223 package which i designed for medium power surface mount applications.