MMFT2955E

` Silicon Gate for Fast Switching Speeds
` Low R_DS(on)  -0.3 max
` The SOT-223 Package can be Soldered Using Wave or Re-flow. The Formed Leads Absorb Thermal Stress During Sol-dering, Eliminating the Possibility of Damage to the Die
` Available in 12 mm Tape and Reel
            Use MMFT2955ET1 to order the 7 inch/1000 unit reel.
            Use MMFT2955ET3 to order the 13 inch/4000 unit reel.

This advanced MMFT2955E E-FET is a TMOS medium power MOSFE designed to withstand high energy in the avalanche and commuta-tion modes. This new energy efficient device also offers a drain-to-source diode with a fast recovery time. Designed for l voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. The MMFT2955E is housed in the SOT-223 package which is designed for medium power surfac mount applications.