MMDFS2P102

PinoutSpecifications Rating Symbol Value Units DraintoSource Voltage VDSS 20 V DraintoGate Voltage (RGS = 1.0 M) VGR 20 V GatetoSource Voltage - Continuous VGS ±20 V Drain Current - Continuous @ TA = 25°C Drain Current- Continuous @ TA = 100°C...

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SeekIC No. : 004423774 Detail

MMDFS2P102: PinoutSpecifications Rating Symbol Value Units DraintoSource Voltage VDSS 20 V DraintoGate Voltage (RGS = 1.0 M) VGR 20 V GatetoSource Voltage - Continuous...

floor Price/Ceiling Price

Part Number:
MMDFS2P102
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Pinout

  Connection Diagram


Specifications

Rating
Symbol
Value
Units
DraintoSource Voltage
VDSS
20
V
DraintoGate Voltage (RGS = 1.0 M)
VGR
20
V
GatetoSource Voltage - Continuous
VGS
±20
V
Drain Current - Continuous @ TA = 25°C
Drain Current- Continuous @ TA = 100°C
Drain Current - Single Pulse (tp 10s)
ID
ID
IDM
4.0
20
Adc

Apk
Total Power Dissipation @ TA = 25°C(2)
PD
2.0
W
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 )
EAS
324
mJ
(2) Mounted on 2, square FR4 board (1, sq. 2 oz. Cu 0.06, thick single sided), Steady State.
(3) Mounted on 2, square FR4 board (1, sq. 2 oz. Cu 0.06, thick single sided), 10 sec. max.



Description

The MMDFS2P102 FETKYE product family incorporates low RDS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers to offer high efficiency components in a space saving configuration. Independent pinouts for MMDFS2P102 TMOS and Schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications such as Buck Converter,BuckBoost, Synchronous Rectification, Low Voltage Motor Control, and Load Management in Battery Packs, Chargers, Cell Phones and other Portable Products.

• HDTMOS Power MOSFET with Low VF, Low IR Schottky Rectifier
• Lower Component Placement and Inventory Costs along with Board Space Savings
• Logic Level Gate Drive - Can be Driven by Logic ICs
• Mounting Information for SO8 Package Provided
• IDSS Specified at Elevated Temperature
• Applications Information Provided




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