PinoutSpecifications Rating Symbol Value Units DraintoSource Voltage VDSS 20 V DraintoGate Voltage (RGS = 1.0 M) VGR 20 V GatetoSource Voltage - Continuous VGS ±20 V Drain Current - Continuous @ TA = 25°C Drain Current- Continuous @ TA = 100°C...
MMDFS2P102: PinoutSpecifications Rating Symbol Value Units DraintoSource Voltage VDSS 20 V DraintoGate Voltage (RGS = 1.0 M) VGR 20 V GatetoSource Voltage - Continuous...
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Rating |
Symbol |
Value |
Units |
DraintoSource Voltage |
VDSS |
20 |
V |
DraintoGate Voltage (RGS = 1.0 M) |
VGR |
20 |
V |
GatetoSource Voltage - Continuous |
VGS |
±20 |
V |
Drain Current - Continuous @ TA = 25°C Drain Current- Continuous @ TA = 100°C Drain Current - Single Pulse (tp 10s) |
ID ID IDM |
4.0 20 |
Adc Apk |
Total Power Dissipation @ TA = 25°C(2) |
PD |
2.0 |
W |
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 ) |
EAS |
324 |
mJ |
The MMDFS2P102 FETKYE product family incorporates low RDS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers to offer high efficiency components in a space saving configuration. Independent pinouts for MMDFS2P102 TMOS and Schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications such as Buck Converter,BuckBoost, Synchronous Rectification, Low Voltage Motor Control, and Load Management in Battery Packs, Chargers, Cell Phones and other Portable Products.
• HDTMOS Power MOSFET with Low VF, Low IR Schottky Rectifier
• Lower Component Placement and Inventory Costs along with Board Space Savings
• Logic Level Gate Drive - Can be Driven by Logic ICs
• Mounting Information for SO8 Package Provided
• IDSS Specified at Elevated Temperature
• Applications Information Provided