MMDF6N03HD

Features: ` Low RDS(on) Provides Higher Efficiency and Extends Battery Life` Logic Level Gate Drive ! Can Be Driven by Logic IC` Miniature SO¤C8 Surface Mount Package ! Saves Board Spa` Diode Is Characterized for Use In Bridge Circuits` Diode Exhibits High Speed, With Soft Recovery` I Specified ...

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SeekIC No. : 004423773 Detail

MMDF6N03HD: Features: ` Low RDS(on) Provides Higher Efficiency and Extends Battery Life` Logic Level Gate Drive ! Can Be Driven by Logic IC` Miniature SO¤C8 Surface Mount Package ! Saves Board Spa` Diode Is C...

floor Price/Ceiling Price

Part Number:
MMDF6N03HD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

` Low RDS(on) Provides Higher Efficiency and Extends Battery Life
` Logic Level Gate Drive !" Can Be Driven by Logic IC
` Miniature SO¤C8 Surface Mount Package !" Saves Board Spa
` Diode Is Characterized for Use In Bridge Circuits
` Diode Exhibits High Speed, With Soft Recovery
` I  Specified at Elevated Temperature DSS
` Mounting Information for SO¤C8 Package Provide




Pinout

  Connection Diagram


Specifications

Rating

Symbol

Value

Unit

Drain - Cto - CSource Volta

VDSS

30

Vdc

Gate - Cto - CSource Voltage - Continu

VGS

±20

Vdc

Drain Current - Continuous @TA = 25
Drain Current - Single Pulse (Tp 10 s)

ID
IDM

6.0
30

Adc
Apk

Source Current - Continuous @TA = 25

IS

1.7

Adc

Total Power Dissipation @ TA = 25 (1)

PD

2.0

Watts

Operating and Storage Temperature Range

TJ ,Tstg

-55 to 150

Single Pulse Drain - Cto - CSource Avalanche Energy - Startin TJ= 25
(VDD = 30 Vdc, VDS = 5.0 Vdc, VL = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 )

EAS

325

mJ

Thermal Resistance - Junction - Cto - CAmbi

RJA

62.5

/W

Maximum Lead Temperature for Soldering Purposes, 1/8 from Case for 10 sec.

TL

260




Description

MMDF6N03HD Dual HDTMOS devices are an advanced series of power MOSFETs which utilize Motorola!fls High Cell Density TMO process. These miniature surface mount MOSFETs feature low RDS(on) and true logic level performance. MMDF6N03HD Dual HDTMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applica- tions are dc¤Cdc converters, and power management in portabl and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.




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