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MMDF3N06VL

Features: New Features of TMOS V• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology• Faster Switching than EFET PredecessorsFeatures Common to TMOS V and TMOS EFETS• Avalanche Energy Specified• IDSS and VDS(on) Spe...

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MMDF3N06VL: Features: New Features of TMOS V• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology• Faster Switching than EFET PredecessorsFe...

MMDF3N06VL Data Sheet

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Part Number:
MMDF3N06VL
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

New Features of TMOS V
• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
• Faster Switching than EFET Predecessors
Features Common to TMOS V and TMOS EFETS
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET
• Miniature SO8 Surface Mount Package Saves Board Space
• Mounting Information for SO8 Package Provided




Specifications

Rating
Symbol
Value
Units
DraintoSource Voltage
VDSS
60
V
DraintoGate Voltage (RGS = 1.0 M)
VDGR
60
V
GatetoSource Voltage - Continuous
VGS
±15
V
Drain Current - Continuous @ TA = 25°C
Drain Current - Continuous @ TA = 100°C
Drain Current - Single Pulse (tp 10s)
ID
ID
IDM
3.3
0.7
10
Adc

Apk
Operating and Storage Temperature Range
TJ,Tstg
55 to 150
°C
Total Power Dissipation @ TA = 25°C(1)
PD
2.0
W
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 3.3 Apk, L = 10 mH, RG = 25 )
EAS
54
mJ
Thermal Resistance Junction to Ambient (1)
RJA
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes, 0.0625, from case for 10 seconds
TL
260
°C
(1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%.


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