MMDF3N06HD

Features:

` Low R<sub>DS(on)</sub> Provides Higher Efficiency and Extends Battery Life
` Logic Level Gate Drive - Can Be Driven by Logic IC
` Miniature SO-C8 Surface Mount Package - Saves Board Spa
` Diode Is Characterized for Use In Bridge Circuits
` Diode Exhibits High Speed, With Soft Recovery
` IDSS  Specified at Elevated Temperature
` Mounting Information for SO-C8 Package Provide

Pinout




Specifications

Rating	Symbol	Value	Unit
Drain-Cto-CSource Volta	VDSS	20	Vdc
Drain-Cto-CGate Voltage (RGS= 1.0 M)	VDGR	20	Vdc
Gate-Cto-CSource Voltage - Continu	VGS	12	Vdc
Drain Current - Continuous @TA = 25 Drain Current - Continuous @TA = 100 Drain Current - Single Pulse (tp 10s)	ID ID IDM	5.2 4.1 48	Adc Apk
Total Power Dissipation @ TA = 25 (1)	PD	2.0	Watts
Operating and Storage Temperature Range	TJ , Tstg	-55 to 15
Thermal Resistance - Junction to Ambient(1)	RJA	62.5	/W
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds	TL	260

Description

MMDF3N06HD Dual HDTMOS are an advanced series of power MOSFETs which utilize Motorola!fls High Cell Density TMOS process. Thes miniature surface mount MOSFETs feature low R_DS(on)  and true logic level performance. Dual HDTMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-Cdc converters and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. MMDF3N06HD can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.