MMDF3N02HDR2

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 90 mOhms
Continuous Drain Current : 3.8 A


Parameters:

Technical/Catalog Information	MMDF3N02HDR2
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	3.8A
Rds On (Max) @ Id, Vgs	90 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds	630pF @ 16V
Power - Max	2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	18nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MMDF3N02HDR2 MMDF3N02HDR2