MMDF2P02HD

PinoutSpecifications Rating Symbol Value Units DraintoSource Voltage VDSS 20 V DraintoGate Voltage (RGS = 1.0 M) VDGR 20 V GatetoSource Voltage - Continuous VGS ±20 V Drain Current - Continuous @ TA = 25°CDrain Current - Continuous @ TA = 75°C...

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MMDF2P02HD Picture
SeekIC No. : 004423755 Detail

MMDF2P02HD: PinoutSpecifications Rating Symbol Value Units DraintoSource Voltage VDSS 20 V DraintoGate Voltage (RGS = 1.0 M) VDGR 20 V GatetoSource Voltage - Continuou...

floor Price/Ceiling Price

Part Number:
MMDF2P02HD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Pinout

  Connection Diagram


Specifications

Rating
Symbol
Value
Units
DraintoSource Voltage
VDSS
20
V
DraintoGate Voltage (RGS = 1.0 M)
VDGR
20
V
GatetoSource Voltage - Continuous
VGS
±20
V
Drain Current - Continuous @ TA = 25°C
Drain Current - Continuous @ TA = 75°C
Drain Current - Single Pulse (tp 10s)
ID
ID
IDM
3.3
2.1
20
Adc

Apk
Operating and Storage Temperature Range
TJ,Tstg
55 to 150
°C
Total Power Dissipation @ TA = 25°C(2)
PD
2.0
W
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 20 Vdc, VGS = 5.0 Vdc, IL = 6.0 Apk, L = 18 mH, RG = 25 )
EAS
324
mJ
Thermal Resistance Junction to Ambient (2)
RJA
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds
TL
260
°C
(1) Negative sign for PChannel device omitted for clarity.
(2) Pulse Test: Pulse Width 300 s, Duty Cycle 2%.



Description

MMDF2P02HD MiniMOSETM devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. MMDF2P02HD MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers,printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are  switched and offer additional safety margin against unexpected voltage transients.

• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Miniature SO8 Surface Mount Package - Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for SO8 Package Provided




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