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MMDF2P02E

Features: • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life• Logic Level Gate Drive - Can Be Driven by Logic ICs• Miniature SO8 Surface Mount Package - Saves Board Space• Diode Is Characterized for Use In Bridge Circuits• Diode Exhibits High Spee...

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SeekIC No. : 004423754 Detail

MMDF2P02E: Features: • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life• Logic Level Gate Drive - Can Be Driven by Logic ICs• Miniature SO8 Surface Mount Package - Saves ...

MMDF2P02E Data Sheet

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Part Number:
MMDF2P02E
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Miniature SO8 Surface Mount Package - Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, with Soft Recovery
• IDSS Specified at Elevated Temperatures
• Avalanche Energy Specified
• Mounting Information for SO8 Package Provided




Pinout

Connection Diagram


Specifications

Rating

Symbol

Value

Unit

DraintoSource Voltage

VDSS

25

Vdc

GatetoSource Voltage - Continuous

VGS

± 20

Vdc

Drain Current - Continuous @ TA = 25
Drain Current - Continuous @ TA = 100
Drain Current - Single Pulse (tp 10 s)

ID
ID
IDM

2.5
1.7
13

Adc
Apk

Total Power Dissipation @ TA = 25 (2)
Derate above 25

PD

2.0
16

W
mW/

Operating and Storage Temperature Range

TJ, Tstg

55 to 150

Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25
(VDD = 20 Vdc, VGS = 10 Vdc, Peak IL = 7.0 Apk, L = 10 mH, RG = 25 )

EAS

245

mJ

Thermal Resistance, Junction to Ambient (2)

RJA

62.5

/W

Maximum Lead Temperature for Soldering Purposes, 0.0625, from case for 10 seconds

TL

260




Description

MMDF2P02E MiniMOSTM devices are an advanced series of power MOSFETs which utilize Motorola's TMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a low reverse recovery time. MMDF2P02E MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.




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