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MMDF2N06VL

Features: New Features of TMOS V• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology• Faster Switching than EFET PredecessorsFeatures Common to TMOS V and TMOS EFETS• Avalanche Energy Specified• IDSS and VDS(on) Spe...

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MMDF2N06VL: Features: New Features of TMOS V• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology• Faster Switching than EFET PredecessorsFe...

MMDF2N06VL Data Sheet

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Part Number:
MMDF2N06VL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

New Features of TMOS V
• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
• Faster Switching than EFET Predecessors

Features Common to TMOS V and TMOS EFETS
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET
• Miniature SO8 Surface Mount Package Saves Board Space
• Mounting Information for SO8 Package Provided




Pinout

Connection Diagram


Specifications

Rating

Symbol

Value

Unit

DraintoSource Voltage

VDSS

25

Vdc

GatetoSource Voltage - Continuous

VGS

± 20

Vdc

Drain Current - Continuous @ TA = 25
Drain Current - Continuous @ TA = 100
Drain Current - Single Pulse (tp 10 ms)

ID
ID
IDM

2.5
1.7
13

Adc
Apk

Total Power Dissipation @ TA = 25 (2)
Derate above 25

PD

2.0
16

W
mW/

Operating and Storage Temperature Range

TJ, Tstg

55 to 150

Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25
(VDD = 20 Vdc, VGS = 10 Vdc, Peak IL = 7.0 Apk, L = 10 mH, RG = 25 )

EAS

245

mJ

Thermal Resistance, Junction to Ambient (2)

RJA

62.5

/W

Maximum Lead Temperature for Soldering Purposes, 0.0625, from case for 10 seconds

TL

260




Description

TMOS V is a new MMDF2N06VL technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these MMDF2N06VLs are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.




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