MMDF2N06V Selling Leads, Price trend, MMDF2N06V DataSheet download, circuit diagram from SeekIC.com

Features: New Features of TMOS V• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology• Faster Switching than EFET PredecessorsFeatures Common to TMOS V and TMOS EFETS• Avalanche Energy Specified• IDSS and VDS(on) Spe...

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SeekIC No. : 004423751 Detail

MMDF2N06V: Features: New Features of TMOS V• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology• Faster Switching than EFET PredecessorsFe...

MMDF2N06V Data Sheet

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Part Number:: MMDF2N06V
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/26

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Product Details

Description

Features:

New Features of TMOS V
• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low R_DS(on) Technology
• Faster Switching than EFET Predecessors

Features Common to TMOS V and TMOS EFETS
• Avalanche Energy Specified
• IDSS and V_DS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET
• Miniature SO8 Surface Mount Package Saves Board Space
• Mounting Information for SO8 Package Provided

Pinout

Connection Diagram

Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	V_DSS	25	Vdc
GatetoSource Voltage - Continuous	V_GS	± 20	Vdc
Drain Current - Continuous @ T_A = 25 Drain Current - Continuous @ T_A = 100 Drain Current - Single Pulse (tp 10 ms)	I_D I_D I_DM	2.5 1.7 13	Adc Apk
Total Power Dissipation @ TA = 25 (2) Derate above 25	P_D	2.0 16	W mW/
Operating and Storage Temperature Range	T_J, T_stg	55 to 150
Single Pulse DraintoSource Avalanche Energy - Starting T_J = 25 (V_DD= 20 Vdc, V_GS = 10 Vdc, Peak I_L = 7.0 Apk, L = 10 mH, R_G = 25 )	E_AS	245	mJ
Thermal Resistance, Junction to Ambient⁽²⁾	R_JA	62.5	/W
Maximum Lead Temperature for Soldering Purposes, 0.0625, from case for 10 seconds	T_L	260

Description

TMOS V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new MMDF2N06V technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. MMDF2N06V is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MMDF2N06V

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