MJF45H11G

Transistors Bipolar (BJT) 10A 80V 50W PNP

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MJF45H11G: Transistors Bipolar (BJT) 10A 80V 50W PNP

floor Price/Ceiling Price

US $ .53~.97 / Piece | Get Latest Price
Part Number:
MJF45H11G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.97
  • $.84
  • $.61
  • $.53
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 10 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Frequency : 40 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220 Full-Pak
Packaging : Tube    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Collector- Emitter Voltage VCEO Max : 80 V
DC Collector/Base Gain hfe Min : 40
Maximum DC Collector Current : 10 A
Maximum Operating Frequency : 40 MHz
Package / Case : TO-220 Full-Pak


Parameters:

Technical/Catalog InformationMJF45H11G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)80V
Current - Collector (Ic) (Max)10A
Power - Max36W
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 2A, 1V
Vce Saturation (Max) @ Ib, Ic1V @ 400mA, 8A
Frequency - Transition40MHz
Current - Collector Cutoff (Max)1A
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MJF45H11G
MJF45H11G



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