MJF44H11G

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Collector- Emitter Voltage VCEO Max : 80 V
Maximum Operating Frequency : 50 MHz
DC Collector/Base Gain hfe Min : 60
Maximum DC Collector Current : 10 A
Package / Case : TO-220 Full-Pak


Parameters:

Technical/Catalog Information	MJF44H11G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	10A
Power - Max	36W
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 2A, 1V
Vce Saturation (Max) @ Ib, Ic	1V @ 400mA, 8A
Frequency - Transition	50MHz
Current - Collector Cutoff (Max)	1A
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJF44H11G MJF44H11G MJF44H11GOS ND MJF44H11GOSND MJF44H11GOS