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MJE8503D

Features: • 1500 Volt Collector-Base Breakdown Capability• Fast Switching: 180 ns Typical Fall Times 450 ns Typical Crossover Times 1.2 ms Typical Storage Times• Low Collector-Emitter Leakage Current - 100 mA Max @ 1500 VCESSpecifications Rating Symbol Value Unit Colle...

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MJE8503D: Features: • 1500 Volt Collector-Base Breakdown Capability• Fast Switching: 180 ns Typical Fall Times 450 ns Typical Crossover Times 1.2 ms Typical Storage Times• Low Collector-Emit...

MJE8503D Data Sheet

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Part Number:
MJE8503D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• 1500 Volt Collector-Base Breakdown Capability
• Fast Switching:
    180 ns Typical Fall Times
    450 ns Typical Crossover Times
    1.2 ms Typical Storage Times
• Low Collector-Emitter Leakage Current - 100 mA Max @ 1500 VCES


Specifications

Rating Symbol Value Unit
CollectorEmitter Voltage VCEO(sus) 700
 Vdc
CollectorEmitter Voltage VCES 1500 Vdc
Collector-Base Voltage VCBO 1500 Vdc
EmitterBase Voltage VEBO 5.0 Vdc
Base Current - Continuous
- Peak (1)		 IC 5.0
10		 Adc
Collector Current - Continuous
Collector Current - Peak		 IB
IBM		 4.0
4.0		 Adc
Total Power Dissipation @ TC = 25°C
@ TC = 100°C
Derate above 25°C		 PD 80
21
0.8

 Watts
W/
Operating and Storage Junction Temperature Range TJ, Tstg 65 to +125



Description

The MJE8503A transistor is designed for high voltage, high speed, power switching in inductive circuits where fall time is critical.


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