Transistors Darlington NPN Si Transistor Epitaxial Darlington
MJE800STU: Transistors Darlington NPN Si Transistor Epitaxial Darlington
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Configuration : | Single | Transistor Polarity : | NPN |
Collector- Emitter Voltage VCEO Max : | 60 V | Emitter- Base Voltage VEBO : | 5 V |
Collector- Base Voltage VCBO : | 60 V | Maximum DC Collector Current : | 4 A |
Maximum Collector Cut-off Current : | 100 uA | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-126 |
Packaging : | Tube |
Technical/Catalog Information | MJE800STU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN - Darlington |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Current - Collector (Ic) (Max) | 4A |
Power - Max | 40W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 1.5A, 3V |
Vce Saturation (Max) @ Ib, Ic | 2.5V @ 30mA, 1.5A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | 100A |
Mounting Type | Through Hole |
Package / Case | TO-126 |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MJE800STU MJE800STU |