MJE803

Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 80 V
Collector- Base Voltage VCBO : 80 V
Mounting Style : Through Hole
Packaging : Bulk
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 4 A
Power Dissipation : 40 W
Maximum Operating Temperature : + 150 C
Package / Case : TO-225
Maximum Collector Cut-off Current : 100 uA


Features:

• High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC
• Complement to MJE700/701/702/703




Specifications

Symbol	Parameter	Value	Units
VCBO	Collector- Base Voltage : MJE800/801 : MJE802/803	60 80	V V
VCEO	Collector-Emitter Voltage : MJE800/801 : MJE802/803	60 80	V V
VEBO	Emitter-Base Voltage	5	V
IC	Collector Current	4	A
IB	Base Current	0.1	A
PC	Collector Dissipation (TC=25°C)	40	W
TJ	Junction Temperature	150	°C
TSTG	Storage Temperature	- 55 ~ 150	°C

Parameters:

Technical/Catalog Information	MJE803
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	4A
Power - Max	40W
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 2A, 3V
Vce Saturation (Max) @ Ib, Ic	2.8V @ 40mA, 2A
Frequency - Transition	-
Current - Collector Cutoff (Max)	100A
Mounting Type	Through Hole
Package / Case	TO-225-3
Packaging	Bulk
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJE803 MJE803 MJE803OS ND MJE803OSND MJE803OS