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MJE802STU

Transistors Darlington NPN Si Transistor Epitaxial Darlington

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SeekIC No. : 00217670 Detail

MJE802STU: Transistors Darlington NPN Si Transistor Epitaxial Darlington

MJE802STU Data Sheet

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Part Number:
MJE802STU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Configuration : Single Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 80 V Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 80 V Maximum DC Collector Current : 4 A
Maximum Collector Cut-off Current : 100 uA Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-126
Packaging : Tube    

Description

Power Dissipation :
Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 80 V
Collector- Base Voltage VCBO : 80 V
Mounting Style : Through Hole
Packaging : Tube
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 4 A
Maximum Operating Temperature : + 150 C
Maximum Collector Cut-off Current : 100 uA
Package / Case : TO-126


Parameters:

Technical/Catalog InformationMJE802STU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Darlington
Voltage - Collector Emitter Breakdown (Max)80V
Current - Collector (Ic) (Max)4A
Power - Max40W
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 1.5A, 3V
Vce Saturation (Max) @ Ib, Ic2.5V @ 30mA, 1.5A
Frequency - Transition-
Current - Collector Cutoff (Max)100A
Mounting TypeThrough Hole
Package / CaseTO-126
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MJE802STU
MJE802STU



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