MJD50T4G

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Emitter- Base Voltage VEBO : 5 V
Collector- Emitter Voltage VCEO Max : 400 V
Maximum DC Collector Current : 1 A
Maximum Operating Frequency : 10 MHz (Min)
DC Collector/Base Gain hfe Min : 30 at 300 mA at 10 V


Parameters:

Technical/Catalog Information	MJD50T4G
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	400V
Current - Collector (Ic) (Max)	1A
Power - Max	15W
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 300mA, 10V
Vce Saturation (Max) @ Ib, Ic	1V @ 200mA, 1A
Frequency - Transition	10MHz
Current - Collector Cutoff (Max)	200A
Mounting Type	Surface Mount
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
Packaging	Digi-Reel?
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJD50T4G MJD50T4G MJD50T4GOSDKR ND MJD50T4GOSDKRND MJD50T4GOSDKR