MJD50

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Emitter- Base Voltage VEBO : 5 V
Collector- Emitter Voltage VCEO Max : 400 V
Packaging : Tube
Maximum DC Collector Current : 1 A
Maximum Operating Frequency : 10 MHz (Min)
DC Collector/Base Gain hfe Min : 30 at 0.3 A at 10 V


Application

• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
• Straight Lead Version in Plastic Sleeves ("1" Suffix)
• Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
• Electrically Similar to Popular TIP47, and TIP50
• 250 and 400 V (Min) - VCEO(sus)
• 1 A Rated Collector Current


Specifications

Rating	Symbol	MJD47	MJD50	Unit
CollectorEmitter Voltage	VCEO	250	400	Vdc
CollectorBase Voltage	VCBO	350	500	Vdc
EmitterBase Voltage	VEBO	5		Vdc
Collector Current - Continuous Peak	IC	1 2		Adc
Base Current	IB	0.6		Adc
Total Power Dissipation @ TC = 25 Derate Above 25	PD	15 0.12		Watts W/
Total Power Dissipation* @ Ta= 25 Derate Above 25	PD	150 0.86		Watts W/
Operating and Storage Junction Temperature Range	TJ, Tstg	65 to +200

Parameters:

Technical/Catalog Information	MJD50
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	400V
Current - Collector (Ic) (Max)	1A
Power - Max	15W
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 300mA, 10V
Vce Saturation (Max) @ Ib, Ic	1V @ 200mA, 1A
Frequency - Transition	10MHz
Current - Collector Cutoff (Max)	200A
Mounting Type	Surface Mount
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
Packaging	Tube
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJD50 MJD50