Transistors Bipolar (BJT) PNP Epitaxial Sil
MJD2955TF: Transistors Bipolar (BJT) PNP Epitaxial Sil
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 60 V |
Emitter- Base Voltage VEBO : | - 5 V | Maximum DC Collector Current : | 10 A |
DC Collector/Base Gain hfe Min : | 20 | Configuration : | Single |
Maximum Operating Frequency : | 2 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | TO-252 |
Packaging : | Reel |
Technical/Catalog Information | MJD2955TF |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Current - Collector (Ic) (Max) | 10A |
Power - Max | 1.75W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A, 4V |
Vce Saturation (Max) @ Ib, Ic | 1.1V @ 400mA, 4A |
Frequency - Transition | 2MHz |
Current - Collector Cutoff (Max) | 50A |
Mounting Type | Surface Mount |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MJD2955TF MJD2955TF |