MJD200G, US $ .19-.35 , ON Semiconductor, MJD200G DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00203887 Detail

MJD200G: Transistors Bipolar (BJT) 5A 25V 12.5W NPN

MJD200G Data Sheet

US $ .19~.35 / Piece | Get Latest Price

Part Number:: MJD200G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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25~100
100~500

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$.19

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Upload time: 2024/11/21

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MJD200 evaluate
Transistors Bipolar (BJT) 5A 25V 12.5W NPN
MJD200RL evaluate
Transistors Bipolar (BJT) 5A 25V 12.5W NPN
MJD200RLG evaluate
US $.19 - .33 / Piece

Transistors Bipolar (BJT) 5A 25V 12.5W NPN

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	25 V
Emitter- Base Voltage VEBO :	8 V	Maximum DC Collector Current :	5 A
DC Collector/Base Gain hfe Min :	70 at 500 mA at 1 V	Configuration :	Single
Maximum Operating Frequency :	65 MHz (Min)	Maximum Operating Temperature :	+ 150 C
Mounting Style :	SMD/SMT	Package / Case :	DPAK
Packaging :	Tube

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Packaging : Tube
Maximum DC Collector Current : 5 A
Collector- Emitter Voltage VCEO Max : 25 V
Emitter- Base Voltage VEBO : 8 V
Maximum Operating Frequency : 65 MHz (Min)
DC Collector/Base Gain hfe Min : 70 at 500 mA at 1 V

Parameters:

Technical/Catalog Information	MJD200G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	25V
Current - Collector (Ic) (Max)	5A
Power - Max	12.5W
DC Current Gain (hFE) (Min) @ Ic, Vce	45 @ 2A, 1V
Vce Saturation (Max) @ Ib, Ic	300mV @ 50mA, 500mA
Frequency - Transition	65MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJD200G MJD200G MJD200GOS ND MJD200GOSND MJD200GOS

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MJD200G

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