MJD200RLG, US $ .19-.33 , ON Semiconductor, MJD200RLG DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00204447 Detail

MJD200RLG: Transistors Bipolar (BJT) 5A 25V 12.5W NPN

MJD200RLG Data Sheet

US $ .19~.33 / Piece | Get Latest Price

Part Number:: MJD200RLG
Mfg:: ON Semiconductor
Supply Ability:: 5000

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1~25
25~100
100~500

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$.33
$.29
$.22
$.19

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Upload time: 2024/8/31

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MJD200 evaluate
Transistors Bipolar (BJT) 5A 25V 12.5W NPN
MJD200G evaluate
US $.19 - .35 / Piece

Transistors Bipolar (BJT) 5A 25V 12.5W NPN
MJD200RL evaluate
Transistors Bipolar (BJT) 5A 25V 12.5W NPN

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	25 V
Emitter- Base Voltage VEBO :	8 V	Maximum DC Collector Current :	5 A
DC Collector/Base Gain hfe Min :	70 at 500 mA at 1 V	Configuration :	Single
Maximum Operating Frequency :	65 MHz (Min)	Maximum Operating Temperature :	+ 150 C
Mounting Style :	SMD/SMT	Package / Case :	DPAK
Packaging :	Reel

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Maximum DC Collector Current : 5 A
Collector- Emitter Voltage VCEO Max : 25 V
Emitter- Base Voltage VEBO : 8 V
Maximum Operating Frequency : 65 MHz (Min)
DC Collector/Base Gain hfe Min : 70 at 500 mA at 1 V

Parameters:

Technical/Catalog Information	MJD200RLG
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	25V
Current - Collector (Ic) (Max)	5A
Power - Max	12.5W
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 500mA, 1V
Vce Saturation (Max) @ Ib, Ic	1.8V @ 1A, 5A
Frequency - Transition	65MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
Packaging	Cut Tape (CT)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJD200RLG MJD200RLG MJD200RLGOSCT ND MJD200RLGOSCTND MJD200RLGOSCT

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MJD200RLG

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