Transistors Bipolar (BJT) 4A 100V 12.5W PNP
MJD253T4: Transistors Bipolar (BJT) 4A 100V 12.5W PNP
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 100 V |
Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 4 A |
DC Collector/Base Gain hfe Min : | 40 at 200 mA at 1 V | Configuration : | Single |
Maximum Operating Frequency : | 40 MHz (Min) | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | DPAK |
Packaging : | Reel |
Technical/Catalog Information | MJD253T4 |
Vendor | ON Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Current - Collector (Ic) (Max) | 4A |
Power - Max | 12.5W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 200mA, 1V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 500mA |
Frequency - Transition | 40MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Surface Mount |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
Packaging | Digi-Reel? |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | MJD253T4 MJD253T4 MJD253T4OSDKR ND MJD253T4OSDKRND MJD253T4OSDKR |