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MJD253-001

Transistors Bipolar (BJT) 4A 100V 12.5W PNP

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SeekIC No. : 00214250 Detail

MJD253-001: Transistors Bipolar (BJT) 4A 100V 12.5W PNP

MJD253-001 Data Sheet

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Part Number:
MJD253-001
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 4 A
DC Collector/Base Gain hfe Min : 40 at 200 mA at 1 V Configuration : Single
Maximum Operating Frequency : 40 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : TO-252-3 (DPAK)
Packaging : Tube    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 100 V
Maximum DC Collector Current : 4 A
Packaging : Tube
Emitter- Base Voltage VEBO : 7 V
Maximum Operating Frequency : 40 MHz
DC Collector/Base Gain hfe Min : 40 at 200 mA at 1 V
Package / Case : TO-252-3 (DPAK)


Parameters:

Technical/Catalog InformationMJD253-001
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)100V
Current - Collector (Ic) (Max)4A
Power - Max12.5W
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 200mA, 1V
Vce Saturation (Max) @ Ib, Ic300mV @ 50mA, 500mA
Frequency - Transition40MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
PackagingTube
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MJD253 001
MJD253001



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