MJD243

Transistors Bipolar (BJT) 4A 100V 12.5W NPN

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SeekIC No. : 00214339 Detail

MJD243: Transistors Bipolar (BJT) 4A 100V 12.5W NPN

floor Price/Ceiling Price

Part Number:
MJD243
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 4 A
DC Collector/Base Gain hfe Min : 40 at 200 mA at 1 V Configuration : Single
Maximum Operating Frequency : 40 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : DPAK
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Collector- Emitter Voltage VCEO Max : 100 V
Maximum DC Collector Current : 4 A
Packaging : Tube
Emitter- Base Voltage VEBO : 7 V
DC Collector/Base Gain hfe Min : 40 at 200 mA at 1 V
Maximum Operating Frequency : 40 MHz (Min)


Features:

• Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain − hFE = 40 (Min) @ IC = 200 mAdc
= 15 (Min) @ IC = 1.0 Adc
• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
• Straight Lead Version in Plastic Sleeves ("−1" Suffix)
• Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
• Low Collector−Emitter Saturation Voltage − VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.6 Vdc (Max) @ IC = 1.0 Adc
• High Current−Gain − Bandwidth Product − fT = 40 MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakage − ICBO = 100 nAdc @ Rated VCB
• Epoxy Meets UL 94, V−0 @ 0.125 in.
• ESD Ratings: Human Body Model, 3B  8000 V Machine Model, C  400 V
• Pb−Free Package is Available




Application

Designed for low voltage, low−power, high−gain audio amplifier applications.


Specifications

Rating
Symbol
Value
Unit
CollectorBase Voltage
VCEO
100
Vdc
CollectorEmitter Voltage
VCBO
100
Vdc
EmitterBase Voltage
VEBO
7.0
Vdc
Collector Current - Continuous -Pake
IC
4.0
8.0
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation @ TC = 25
Derate Above 25
PD
12.5
0.1
W
W/
Total Device Dissipation @ TC = 25
(Note 1)
Derate Above 25
PD
1.4
0.011
W
W/
Operating and Storage Junction Temperature Range
TJ, Tstg
65 to +200



Parameters:

Technical/Catalog InformationMJD243
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)100V
Current - Collector (Ic) (Max)4A
Power - Max12.5W
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 200mA, 1V
Vce Saturation (Max) @ Ib, Ic300mV @ 50mA, 500mA
Frequency - Transition40MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
PackagingTube
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MJD243
MJD243



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