MJD200T4

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Maximum DC Collector Current : 5 A
Collector- Emitter Voltage VCEO Max : 25 V
Emitter- Base Voltage VEBO : 8 V
Maximum Operating Frequency : 65 MHz (Min)
DC Collector/Base Gain hfe Min : 70 at 500 mA at 1 V


Parameters:

Technical/Catalog Information	MJD200T4
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	25V
Current - Collector (Ic) (Max)	5A
Power - Max	12.5W
DC Current Gain (hFE) (Min) @ Ic, Vce	45 @ 2A, 1V
Vce Saturation (Max) @ Ib, Ic	300mV @ 50mA, 500mA
Frequency - Transition	65MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
Packaging	Digi-Reel?
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJD200T4 MJD200T4 MJD200T4OSDKR ND MJD200T4OSDKRND MJD200T4OSDKR