MJ802G, US $ 1.4-2.11 , ON Semiconductor, MJ802G DataSheet download, circuit diagram from SeekIC.com

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MJ802G: Transistors Bipolar (BJT) 30A 90V 200W NPN

MJ802G Data Sheet

US $ 1.4~2.11 / Piece | Get Latest Price

Part Number:: MJ802G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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1~25
25~100
100~500

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$2.11
$1.72
$1.55
$1.4

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15 Days
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Upload time: 2024/8/31

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Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	90 V
Emitter- Base Voltage VEBO :	4 V	Maximum DC Collector Current :	30 A
DC Collector/Base Gain hfe Min :	25	Configuration :	Single
Maximum Operating Frequency :	2 MHz (Min)	Maximum Operating Temperature :	+ 200 C
Mounting Style :	Through Hole	Package / Case :	TO-204
Packaging :	Tray

Description

Transistor Polarity : NPN
Configuration : Single
Mounting Style : Through Hole
DC Collector/Base Gain hfe Min : 25
Maximum Operating Temperature : + 200 C
Package / Case : TO-204
Packaging : Tray
Emitter- Base Voltage VEBO : 4 V
Maximum Operating Frequency : 2 MHz (Min)
Collector- Emitter Voltage VCEO Max : 90 V
Maximum DC Collector Current : 30 A

Parameters:

Technical/Catalog Information	MJ802G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	90V
Current - Collector (Ic) (Max)	30A
Power - Max	200W
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 7.5A, 2V
Vce Saturation (Max) @ Ib, Ic	800mV @ 750mA, 7.5A
Frequency - Transition	2MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Tray
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJ802G MJ802G MJ802GOS ND MJ802GOSND MJ802GOS

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MJ802G

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