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MJ802G

Transistors Bipolar (BJT) 30A 90V 200W NPN

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SeekIC No. : 00207390 Detail

MJ802G: Transistors Bipolar (BJT) 30A 90V 200W NPN

MJ802G Data Sheet

floor Price/Ceiling Price

US $ 1.4~2.11 / Piece | Get Latest Price
Part Number:
MJ802G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $2.11
  • $1.72
  • $1.55
  • $1.4
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 90 V
Emitter- Base Voltage VEBO : 4 V Maximum DC Collector Current : 30 A
DC Collector/Base Gain hfe Min : 25 Configuration : Single
Maximum Operating Frequency : 2 MHz (Min) Maximum Operating Temperature : + 200 C
Mounting Style : Through Hole Package / Case : TO-204
Packaging : Tray    

Description

Transistor Polarity : NPN
Configuration : Single
Mounting Style : Through Hole
DC Collector/Base Gain hfe Min : 25
Maximum Operating Temperature : + 200 C
Package / Case : TO-204
Packaging : Tray
Emitter- Base Voltage VEBO : 4 V
Maximum Operating Frequency : 2 MHz (Min)
Collector- Emitter Voltage VCEO Max : 90 V
Maximum DC Collector Current : 30 A


Parameters:

Technical/Catalog InformationMJ802G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)90V
Current - Collector (Ic) (Max)30A
Power - Max200W
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 7.5A, 2V
Vce Saturation (Max) @ Ib, Ic800mV @ 750mA, 7.5A
Frequency - Transition2MHz
Current - Collector Cutoff (Max)-
Mounting TypeChassis Mount
Package / CaseTO-204, TO-3
PackagingTray
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MJ802G
MJ802G
MJ802GOS ND
MJ802GOSND
MJ802GOS



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