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MJ802: Transistors Bipolar (BJT) NPN Darlington Power

MJ802 Data Sheet

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Part Number:: MJ802
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Upload time: 2024/12/30

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Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	90 V
Emitter- Base Voltage VEBO :	4 V	Maximum DC Collector Current :	30 A
DC Collector/Base Gain hfe Min :	25	Configuration :	Single
Maximum Operating Frequency :	2 MHz (Min)	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-3
Packaging :	Bulk

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
DC Collector/Base Gain hfe Min : 25
Emitter- Base Voltage VEBO : 4 V
Maximum Operating Frequency : 2 MHz (Min)
Packaging : Bulk
Collector- Emitter Voltage VCEO Max : 90 V
Package / Case : TO-3
Maximum DC Collector Current : 30 A

Specifications

Rating	Symbol	Value	Unit
CollectorEmitter Voltage	V_CEO	100	Vdc
CollectorEmitter Voltage	V_CEX	100	Vdc
CollectorEmitter Voltage	V_CEV	90	Vdc
Emitter Base Voltage	V_EB	4.0	Vdc
Collector Current	I_C	30	Adc
Base Current	I_B	7.5	Adc
Total Power Dissipation @ T_C = 25 Derate above 25	P_D	200 1.14	Watts W/
Operating and Storage Junction Temperature Range	T_J,T_stg	65 to +200

Parameters:

Technical/Catalog Information	MJ802
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	90V
Current - Collector (Ic) (Max)	30A
Power - Max	200W
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 7.5A, 2V
Vce Saturation (Max) @ Ib, Ic	800mV @ 750mA, 7.5A
Frequency - Transition	2MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Tray
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJ802 MJ802 MJ802OS ND MJ802OSND MJ802OS

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