MJ15022

Transistor Polarity : NPN
Configuration : Single
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Temperature : + 200 C
Package / Case : TO-204
Packaging : Tray
DC Collector/Base Gain hfe Min : 15
Maximum DC Collector Current : 16 A
Maximum Operating Frequency : 4 MHz (Min)
Collector- Emitter Voltage VCEO Max : 200 V


Application

• High Safe Operating Area (100% Tested) - 2 A @ 80 V
• High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc




Specifications

Rating	Symbol	MJ15022	MJ15024	Unit
CollectorEmitter Voltage	VCEO	200	250	Vdc
Collector Base Voltage	VCBO	300	350	Vdc
EmitterBase Voltage	VEBO	5		Vdc
CollectorEmitter Voltage	VCEX	400		vdc
Collector Current - Continuous Peak (1)	IC	16 330		Adc
Base Current - Continuous	IB	5		Adc
Total Power Dissipation @ TC = 25 B@ TC = 100 Derate above 25	PD	250 1.43		Watts W/
Operating and Storage Junction Temperature Range	TJ, Tstg	65 to +200

Parameters:

Technical/Catalog Information	MJ15022
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	200V
Current - Collector (Ic) (Max)	16A
Power - Max	250W
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 8A, 4V
Vce Saturation (Max) @ Ib, Ic	1.4V @ 800mA, 8A
Frequency - Transition	4MHz
Current - Collector Cutoff (Max)	500A
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Tray
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJ15022 MJ15022 MJ15022OS ND MJ15022OSND MJ15022OS