MJ15001

Transistor Polarity : NPN
Configuration : Single
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
DC Collector/Base Gain hfe Min : 25
Maximum DC Collector Current : 15 A
Maximum Operating Temperature : + 200 C
Package / Case : TO-204
Packaging : Tray
Maximum Operating Frequency : 2 MHz (Min)
Collector- Emitter Voltage VCEO Max : 140 V


Features:

• High Safe Operating Area (100% Tested) - 200 W @ 40 V 50 W @ 100 V
• For Low Distortion Complementary Designs
• High DC Current Gain - hFE = 25 (Min) @ IC = 4 Adc




Specifications

Rating	Symbol	Value	Unit
CollectorEmitter Voltage	VCEO	140	Vdc
CollectorBase Voltage	VCBO	140	Vdc
EmitterBase Voltage	VEBO	5	Vdc
Collector Current - Continuous	IC	15	Adc
Base Current - Continuous	IB	5	Adc
Emitter Current - Continuous	IE	20	Adc
Total Power Dissipation @ TC = 25 Derate above 25	PD	200 1.14	Watts W/
Operating and Storage Junction Temperature Range	TJ, Tstg	65 to +200

Parameters:

Technical/Catalog Information	MJ15001
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	140V
Current - Collector (Ic) (Max)	15A
Power - Max	200W
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 4A, 2V
Vce Saturation (Max) @ Ib, Ic	1V @ 400mA, 4A
Frequency - Transition	2MHz
Current - Collector Cutoff (Max)	250A
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Tray
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJ15001 MJ15001