MJ15011G Selling Leads, Price trend , ON Semiconductor, MJ15011G DataSheet download, circuit diagram from SeekIC.com

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MJ15011G: Transistors Bipolar (BJT) 10A 250V 200W NPN

MJ15011G Data Sheet

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Part Number:: MJ15011G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2024/5/16

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Transistors Bipolar (BJT) 15A 140V 200W NPN
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US $1.55 - 2.33 / Piece

Transistors Bipolar (BJT) 15A 140V 200W NPN

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Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	250 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	10 A
DC Collector/Base Gain hfe Min :	20	Configuration :	Single
Maximum Operating Temperature :	+ 200 C	Mounting Style :	Through Hole
Package / Case :	TO-204	Packaging :	Tray

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
DC Collector/Base Gain hfe Min : 20
Maximum Operating Temperature : + 200 C
Package / Case : TO-204
Packaging : Tray
Collector- Emitter Voltage VCEO Max : 250 V
Maximum DC Collector Current : 10 A

Parameters:

Technical/Catalog Information	MJ15011G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	250V
Current - Collector (Ic) (Max)	10A
Power - Max	200W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 2A, 2V
Vce Saturation (Max) @ Ib, Ic	600mV @ 200mA, 2A
Frequency - Transition	-
Current - Collector Cutoff (Max)	1mA
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Tray
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJ15011G MJ15011G MJ15011GOS ND MJ15011GOSND MJ15011GOS

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MJ15011G

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