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MJ15002G: Transistors Bipolar (BJT) 15A 140V 200W PNP

MJ15002G Data Sheet

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Part Number:: MJ15002G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2024/10/19

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Transistors Bipolar (BJT) 15A 140V 200W NPN
MJ15001G evaluate
US $1.55 - 2.33 / Piece

Transistors Bipolar (BJT) 15A 140V 200W NPN

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Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	140 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	15 A
DC Collector/Base Gain hfe Min :	25	Configuration :	Single
Maximum Operating Frequency :	2 MHz (Min)	Maximum Operating Temperature :	+ 200 C
Mounting Style :	Through Hole	Package / Case :	TO-204
Packaging :	Tray

Description

Configuration : Single
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
DC Collector/Base Gain hfe Min : 25
Maximum DC Collector Current : 15 A
Maximum Operating Temperature : + 200 C
Package / Case : TO-204
Packaging : Tray
Maximum Operating Frequency : 2 MHz (Min)
Collector- Emitter Voltage VCEO Max : 140 V

Parameters:

Technical/Catalog Information	MJ15002G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	140V
Current - Collector (Ic) (Max)	15A
Power - Max	200W
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 4A, 2V
Vce Saturation (Max) @ Ib, Ic	1V @ 400mA, 4A
Frequency - Transition	2MHz
Current - Collector Cutoff (Max)	250A
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Tray
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJ15002G MJ15002G MJ15002GOS ND MJ15002GOSND MJ15002GOS

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MJ15002G

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