DescriptionThe MIG5Q805H is designed as toshiba integrated IGBT module silicon N channel IGBT for high power switching applications and motor control applications.MIG5Q805H has four features. (1)Integrates inverter, converter power circuits on one package. (2)Output (inverter stage) which means 5A...
MIG5Q805H: DescriptionThe MIG5Q805H is designed as toshiba integrated IGBT module silicon N channel IGBT for high power switching applications and motor control applications.MIG5Q805H has four features. (1)Int...
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DescriptionThe MIG50J101H is a kind of intelligent power module. It is silicon N channel IGBT. It ...
DescriptionThe MIG50J201H is a kind of intelligent power module. It is silicon N channel IGBT. The...
Application`Integrates inverter, brake power circuits & control circuits (IGBT drive units, pr...
The MIG5Q805H is designed as toshiba integrated IGBT module silicon N channel IGBT for high power switching applications and motor control applications.
MIG5Q805H has four features. (1)Integrates inverter, converter power circuits on one package. (2)Output (inverter stage) which means 5A/ 1200V IGBT. (3)Input (converter stage) which means 15A/ 1600V silicon rectifier. (4)The electrodes are isolated from case. Those are all the main features.
Some absolute maximum ratings of MIG5Q805H have been concluded into several points as follow. (1)Its collector to emitter voltage would be 1200V. (2)Its gate to emitter voltage would be +/-20V. (3)Its collector current would be 5A for DC and 10A for 1ms. (4)Its forward current would be 5A for DC and would be 10A for 1ms. (5)Its collector power dissipation would be 40W. (6)Its repetitive peak reverse voltage which would be 1600V. (7)Its average output recitified current would be 15A. (8)Its peak one cycle surge forward current (50Hz, non-repetitive) which would be 250A. (9)Its storage temperature range would be from -40°C to 125°C. (10)Its isolation voltage would be 2500V. (11)Its screw torque would be 1.5Nm. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some electrical characteristics of MIG5Q805H are concluded as follow. (1)Its gate leakage current would be max +/-500nA. (2)Its collector cutoff current would be max 1.0mA. (3)Its gate to emitter cutoff voltage would be min 3.0V and max 6.0V. (4)Its collector to emitter saturation voltage would be typ 2.8V and max 3.4V. (5)Its input capacitance would be typ 650pF. (6)Its switching time would be typ 0.07us and max 0.15us for rise time and it would be typ 0.15us and max 0.30us for turn-on time and it would be typ 0.1us and max 0.30us for fall time and it would be typ 0.60us and max 1.2us for turn-off time. (7)Its forward voltage would be typ 2.2V and max 3.0V. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!