MIG50J101H

The MIG50J101H is a kind of intelligent power module. It is silicon N channel IGBT. It is designed for high power switching applications and motor control applications. There are some features as follows: (1)integrates inverter & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package; (2)the electrodes are isolated from case; (3)high speed type IGBT: VCE(sat)=2.5 V max, toff=3.0s max and trr=0.30s; (4)outline: TOSHIBA 2-110A1A; (5)weight: 520g.

The following is about the maximum ratings of MIG50J101H (Tj=25): first is about the inverter part: (1)supply voltage, VCC: 450 V when P-N power terminal; (2)collector emitter voltage, VCES: 600 V; (3)collector current (DC), IC: 50 A at Tc=25; (4)forward current (DC), IF: 50 A at Tc=25; (5)collector power dissipation, PC: 150 W at Tc=25; (6)junction temperature, Tj: 150; then is about the control part: (1)control supply voltage, VD: 20 V at VD-GND terminal; (2)input voltage, IIN: 20 V at IN-GND terminal; (3)fault output voltage, VFO: 20 V at FO-GND terminal; (4)fault output current, IFO: 14 mA; the last one is about all system: (1)operating temperature, TC: -20 to +100; (2)storage temperature range, Tstg: -40 to +125; (3)isolation voltage, VISO: 2500 V when AC 1 minute.

The last one is about some electrical characteristics of MIG50J101H (Tj=25): first is about the inverter part: (1)collector cut-off current, ICEX: 1.0 mA mA max at VCEX=600 V, Tj=25; 20 mA mA at VCE=600 V, Tj=125; (2)collector emitter saturation voltage, VCE(sat): 2.0 V typ and 2.5 V max at VD=15 V, VIN=15 V0 V, IC=50 A, Tj=25; 2.0 V typ at VD=15 V, VIN=15 V0 V, IC=50 A, Tj=125; (3)forward voltage, VF: 2.1 V typ and 3.0 V max at IF=50 A; then is about the control part (Tj=25): (1)circuit current, ID: 8 mA when VD=15 V when high slide and 24 mA typ at VD=15 V when low slide; (2)input on signal voltage, VIN(ON): 1.3 V min, 1.5 V typ and 1.7 V max when VD=15 V, IC=50 mA; (3)input off signal voltage, VIN(OFF): 2.2 V min, 2.5 V typ and 2.8 V max when VD=15 V, IC=50 mA; (4)fault output current: IFO(on) (protection): 8 mA min, 10 mA typ and 12 mA max; fault output current: IFO(off) (normal): 1 mA max; the last one is about the other parts: (1)junction to case thermal resistance, Rth(j-c): 0.833/W max at inverter IGBT stage; (2)junction to case thermal resistance, Rth(j-c): 2.000/W max at inverter FRD stage; (3)case to fin thermal resistance, Rth(c-f): 0.05/W typ when compound is applied.