MIG50J806H

The MIG50J806H is a kind of TOSHIBA interated IGBT module(silicon N channel IGBT) which is designed for high power switching and motor control applications.

Features of MIG50J806H are: (1)integrates inverter, converter power circuits and thermistor in one package; (2)output(inverter stage):350 A/600 V IGBT; (3)input(converter stage): 330 A/800 A silicon rectifier; (4)the electrodes are isolated from case; (5)wieght: 190g.

The absolute maximum rating of MIG50J806H can be summerized as:(1): collector-emitter voltage, VCES is 600 V, inverter; (2): gate-emitter voltage, VGES is ±20 V, inverter; (3): collector power dissipatio, Tc is 25, Pc is 200 W, inverter; (4): repetitive peak reverse voltage, VRRM is 800 V, converter; (5): average output rectified current, IO is 30 A, converter; (6): peak one cycle surge forward current(50 Hz, non-repetitive), IFSM is 400 A, converter; (7): storage temperature range, tstg is -40 to 125, module; (8): junction temperature, Tj is 150; (9): isolation voltage, Visol is 2500 V (AC 1 minute); (10): screw torque is 6 N-m.

The electrical characteristics of MIG50J806H are: (1): gate leakage current, IGES is ±500 nA max when VGE is ±20 V and VCE is 0; (2): collector cut-off current, ICES is 1.0 mA max when VCE is 600 V and VGE is 0; (3): gate-emitter cut-off voltage, VGE(off) is 5.0 V min and 8.0 V max when IC is 5 mA and VCE is 5 V; (4): input capacitance, Cies is 4800 pF typ when VCE is 10 V , VGE is 0 and f is 1 MHz; (5): forward voltage, VF is 2.3 V typ and 3.0 V max when IF is 50 A and VGE is 0.