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MGSF2N02ELT1

MOSFET 20V 2.8A N-Channel

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SeekIC No. : 00164919 Detail

MGSF2N02ELT1: MOSFET 20V 2.8A N-Channel

MGSF2N02ELT1 Data Sheet

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Part Number:
MGSF2N02ELT1
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 2.8 A
Resistance Drain-Source RDS (on) : 85 mOhms at 4.5 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-23 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 2.8 A
Resistance Drain-Source RDS (on) : 85 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationMGSF2N02ELT1
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C2.8A
Rds On (Max) @ Id, Vgs85 mOhm @ 3.6A, 4.5V
Input Capacitance (Ciss) @ Vds 150pF @ 5V
Power - Max1.25W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs3.5nC @ 4V
Package / CaseSOT-23-3, TO-236-3, Micro3?, SSD3, SST3
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MGSF2N02ELT1
MGSF2N02ELT1
MGSF2N02ELT1OS ND
MGSF2N02ELT1OSND
MGSF2N02ELT1OS



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