MGSF1N02LT1

MOSFET 20V 750mA N-Channel

product image

MGSF1N02LT1 Picture
SeekIC No. : 00165322 Detail

MGSF1N02LT1: MOSFET 20V 750mA N-Channel

floor Price/Ceiling Price

Part Number:
MGSF1N02LT1
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/10/5

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.75 A
Resistance Drain-Source RDS (on) : 90 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-23 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Resistance Drain-Source RDS (on) : 90 mOhms
Continuous Drain Current : 0.75 A


Specifications

Rating Symbol Value Unit
DraintoSource Voltage VDSS 20 Vdc
GateEmitter Voltage - Continuous VGS ±20 Vdc
Drain Current - Continuous @ TA = 25°C
Drain Current - Pulsed Drain Current (tp 3 10 ms)
ID
IDM
750
2000
A
Total Power Dissipation @ TC = 25°C
PD 400 mW
Operating and Storage Junction Temperature Range TJ, Tstg 55 to 150 °C

Thermal Resistance - Junction to Ambient

RqJA
300 °C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 5 seconds TL 260 °C



Parameters:

Technical/Catalog InformationMGSF1N02LT1
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C750mA
Rds On (Max) @ Id, Vgs90 mOhm @ 1.2A, 10V
Input Capacitance (Ciss) @ Vds 125pF @ 5V
Power - Max400mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs-
Package / CaseSOT-23-3, TO-236-3, Micro3?, SSD3, SST3
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MGSF1N02LT1
MGSF1N02LT1
MGSF1N02LT1OSCT ND
MGSF1N02LT1OSCTND
MGSF1N02LT1OSCT



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
RF and RFID
Potentiometers, Variable Resistors
Static Control, ESD, Clean Room Products
Isolators
Boxes, Enclosures, Racks
Line Protection, Backups
View more