MGSF1P02LT1

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Packaging: Tape & Reel (TR)
Gate Charge (Qg) @ Vgs: -
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 750mA
Power - Max: 400mW
Manufacturer: ON Semiconductor
Rds On (Max) @ Id, Vgs: 350 mOhm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds: 130pF @ 5V


Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	VDSS	20	Vdc
GateEmitter Voltage - Continuous	VGS	±20	Vdc
Drain Current - Continuous @ TA = 25°C Drain Current - Pulsed Drain Current (tp 3 10 ms)	ID IDM	750 2000	A
Total Power Dissipation @ TC = 25°C	PD	400	mW
Operating and Storage Junction Temperature Range	TJ, Tstg	55 to 150	°C
Thermal Resistance - Junction to Ambient	RqJA	300	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 5 seconds	TL	260	°C

Parameters:

Technical/Catalog Information	MGSF1P02LT1
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	750mA
Rds On (Max) @ Id, Vgs	350 mOhm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds	130pF @ 5V
Power - Max	400mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	-
Package / Case	SOT-23-3, TO-236-3, Micro3?, SSD3, SST3
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MGSF1P02LT1 MGSF1P02LT1 MGSF1P02LT1OSCT ND MGSF1P02LT1OSCTND MGSF1P02LT1OSCT