MGSF1P02ELT1 Selling Leads, Price trend, MGSF1P02ELT1 DataSheet download, circuit diagram from SeekIC.com

Specifications Rating Symbol Value Unit DraintoSource Voltage VDSS 20 Vdc GateEmitter Voltage - Continuous VGS ± 8.0 Vdc Drain Current - Continuous @ TA = 25°CDrain Current - Pulsed Drain Current (tp 3 10 ms) IDIDM 7502000 A Total Power Dissipation @ TC = 25°C PD 400...

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SeekIC No. : 004419988 Detail

MGSF1P02ELT1: Specifications Rating Symbol Value Unit DraintoSource Voltage VDSS 20 Vdc GateEmitter Voltage - Continuous VGS ± 8.0 Vdc Drain Current - Continuous @ TA = 25°CDrain Current - ...

MGSF1P02ELT1 Data Sheet

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Part Number:: MGSF1P02ELT1
Supply Ability:: 5000

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1~5000

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15 Days

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Upload time: 2024/11/26

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MGSF1N02EL evaluate
Specifications Rating Symbol Value Unit Drain−to−Source Voltage V...
MGSF1N02ELT1 evaluate
MOSFET N-CH 20V 750MA SOT-23
MGSF1N02LT1 evaluate
MOSFET 20V 750mA N-Channel

Product Details

Description

Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	V_DSS	20	Vdc
GateEmitter Voltage - Continuous	V_GS	± 8.0	Vdc
Drain Current - Continuous @ T_A = 25°C Drain Current - Pulsed Drain Current (tp 3 10 ms)	I_DI_DM	750 2000	A
Total Power Dissipation @ T_C= 25°C	P_D	400	mW
Operating and Storage Junction Temperature Range	T_J, T_stg	55 to 150	°C
Thermal Resistance - Junction to Ambient	R_qJA	300	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 5 seconds	T_L	260	°C

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