Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Mounting Style
: SMD/SMT
Packaging
: Reel
Drain-Source Breakdown Voltage
: 30 V
Package / Case
: SOT-23
Maximum Operating Temperature
: + 150 C
Resistance Drain-Source RDS (on)
: 100 mOhms
Continuous Drain Current
: 2.1 A
DescriptionThe MGSF1N03LT3G is designed as one kind of 30 V, 2.1 A, single N-channel, SOT-23 MOSFET. Features of the MGSF1N03LT3G are:(1)Low RDS(on) Provides Higher Efficiency and Extends Battery Life; (2)Miniature SOT-23 Surface Mount Package Saves Board Space; (3)Pb-Free Package is Available.
The absolute maximum ratings of the MGSF1N03LT3G can be summarized as:(1)Drain-to-Source Voltage: 30 V;(2)Gate-to-Source Voltage: ±20 V;(3)Power Dissipation: 0.73 W;(4)Continuous Drain Current TA=25°C: 1.6 A;(5)Continuous Drain Current TA=85°C: 1.1 A;(6)Power Dissipation: 0.42 W;(7)Pulsed Drain Current:6.0 A;(8)ESD Capability: 125 V;(9)Operating Junction and Storage Temperature: -55 to 150°C;(10)Source Current (Body Diode): 2.1 A;(11)Lead Temperature for Soldering Purposes (1/8" from case for 10 s): 260 °C. If you want to know more information such as the electrical characteristics about the MGSF1N03LT3G, please download the datasheet in www.seekic.com or www.chinaicmart.com .
Parameters: | Technical/Catalog Information | MGSF1N03LT3G |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 1.6A |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 1.2A, 10V |
| Input Capacitance (Ciss) @ Vds | 140pF @ 5V |
| Power - Max | 420mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | - |
| Package / Case | SOT-23-3, TO-236-3, Micro3?, SSD3, SST3 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MGSF1N03LT3G
MGSF1N03LT3G
|
MGSF1N03LT3G Data Sheet
