MOSFET 30V 2.1A N-Channel
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Specifications Rating Symbol Value Unit DraintoSource Voltage VDSS 20 Vdc GatetoS...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 2.1 A | ||
Resistance Drain-Source RDS (on) : | 100 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-23 | Packaging : | Reel |
Technical/Catalog Information | MGSF1N03LT1G |
Vendor | ON Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 1.6A |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 1.2A, 10V |
Input Capacitance (Ciss) @ Vds | 140pF @ 5V |
Power - Max | 420mW |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | - |
Package / Case | SOT-23-3, TO-236-3, Micro3?, SSD3, SST3 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MGSF1N03LT1G MGSF1N03LT1G MGSF1N03LT1GOSDKR ND MGSF1N03LT1GOSDKRND MGSF1N03LT1GOSDKR |