MGSF1N03LT1G

MOSFET 30V 2.1A N-Channel

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MGSF1N03LT1G: MOSFET 30V 2.1A N-Channel

floor Price/Ceiling Price

US $ .12~.25 / Piece | Get Latest Price
Part Number:
MGSF1N03LT1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.25
  • $.21
  • $.15
  • $.12
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 2.1 A
Resistance Drain-Source RDS (on) : 100 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-23 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 100 mOhms
Continuous Drain Current : 2.1 A


Parameters:

Technical/Catalog InformationMGSF1N03LT1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C1.6A
Rds On (Max) @ Id, Vgs100 mOhm @ 1.2A, 10V
Input Capacitance (Ciss) @ Vds 140pF @ 5V
Power - Max420mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs-
Package / CaseSOT-23-3, TO-236-3, Micro3?, SSD3, SST3
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MGSF1N03LT1G
MGSF1N03LT1G
MGSF1N03LT1GOSDKR ND
MGSF1N03LT1GOSDKRND
MGSF1N03LT1GOSDKR



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