MOSFET 30V 2.1A N-Channel
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 2.1 A | ||
Resistance Drain-Source RDS (on) : | 100 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-23 | Packaging : | Reel |
Rating | Symbol | Value | Unit |
DraintoSource Voltage | VDSS | 30 | Vdc |
GateEmitter Voltage - Continuous | VGS | ± 20 | Vdc |
Drain Current - Continuous @ TA = 25°C Drain Current - Pulsed Drain Current (tp 3 10 ms) |
ID IDM |
750 |
A |
Total Power Dissipation @ TC = 25°C |
PD | 400 | mW |
Operating and Storage Junction Temperature Range | TJ, Tstg | 55 to 150 | °C |
Thermal Resistance - Junction to Ambient |
RqJA |
300 | °C/W |
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 5 seconds | TL | 260 | °C |
Technical/Catalog Information | MGSF1N03LT1 |
Vendor | ON Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 1.6A |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 1.2A, 10V |
Input Capacitance (Ciss) @ Vds | 140pF @ 5V |
Power - Max | 420mW |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | - |
Package / Case | SOT-23-3, TO-236-3, Micro3?, SSD3, SST3 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | MGSF1N03LT1 MGSF1N03LT1 MGSF1N03LT1OSCT ND MGSF1N03LT1OSCTND MGSF1N03LT1OSCT |