Application• High input impedance• Enhancement-mode• The electrodes are isolated from case.Specifications Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1200 V Gate-emitter voltage VGES ±20 V Collector current DC IC 400 A 1ms ...
MG400Q1US65H: Application• High input impedance• Enhancement-mode• The electrodes are isolated from case.Specifications Characteristics Symbol Rating Unit Collector-emitter voltage ...
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Application· Integrates a complete half bridge power circuit and fault-signal output circuit in on...
DescriptionThe MG400Q1US41 is designed as one kind of TOSHIBA GTR module silicon channel IGBTs wit...
Characteristics | Symbol | Rating | Unit | |
Collector-emitter voltage | VCES | 1200 | V | |
Gate-emitter voltage | VGES | ±20 | V | |
Collector current | DC | IC | 400 | A |
1ms | ICP | 800 | ||
Forward current | DC | IF | 400 | A |
1ms | IFM | 800 | ||
Total power dissipation (Tc=25°C) | PC | 2650 | W | |
Junction temperature | Tj | 150 | ||
Storage temperature range | Tstg | -40 ~ 125 | ||
Isolation voltage | VIsol | 2500 (AC 1 minute) |
V | |
Screw Torque | Terminal | 3 | N`m | |
Mounting | 3 |